HSK2474J データシートの表示（PDF） - Hi-Sincerity Microelectronics
部品番号
コンポーネント説明
メーカー
HSK2474J Datasheet PDF : 5 Pages
| |||
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 1/5
HSK2474J
N - Channel MOSFETs
Description
• Dynamic dv/dt Rating
• Repetitive Avalanche rated
• Surface Mount
• Straigh Lead
• Available in Tape&Reel
• Fast Switching
• Ease of Paralleling
Features
• Low Drain-Source ON Resistance - RDS(ON)=1.2Ω(Typ.)@ VDS=10V, ID=1.3A
• High Forward Transfer Admittance -|Yfs|=1.2S@VDS=50V, ID=1.3A
• Low Leakage Current - IDSS=100uA (Max.)@VDS=200V
• Enhancement-Mode - Vth = 2.0~4.0V@VDS=4V, ID=250uA
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 25 W
• Maximum Voltages and Currents
Drain to Source Breakdown Voltage ................................................................................. 250 V
Drain to Gate Breakdown Voltage..................................................................................... 250 V
Gate to Source Voltage.................................................................................................... ± 20 V
Drain Current (Cont.) ......................................................................................................... 2.2 A
Drain Current (Pluse.)........................................................................................................ 8.8 A
Thermal Characteristics
Characteristic
Junction to Case
Junction to Ambient
Symbol
RθJC
RθJA
Max.
5
50
Units
°C/W
°C/W
HSMC Product Specification
Share Link: 