DF06M-E3/45 データシートの表示（PDF） - Vishay Siliconix
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DF06M-E3/45 Datasheet PDF : 4 Pages
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DF005M thru DF10M
Vishay General Semiconductor
10
1
0.1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
100
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
10
1
0.1
0.01
0.1
1
10
100
t - Heating Time (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFM
0.255 (6.5) 0.315 (8.00)
0.245 (6.2) 0.285 (7.24)
0.335 (8.51)
0.320 (8.12)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
0.205 (5.2)
0.195 (5.0)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.075 (1.90)
0.055 (1.39)
0.013 (0.33)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Document Number: 88571 For technical questions within your region, please contact one of the following:
Revision: 14-Jan-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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