IXFN180N10 データシートの表示（PDF） - IXYS CORPORATION
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IXFN180N10 Datasheet PDF : 6 Pages
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IXFN180N10
Fig. 7. Input Admittance
300
250
TJ = - 40ºC
25ºC
200
125ºC
150
100
50
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
350
300
250
200
150
TJ = 125ºC
100
TJ = 25ºC
50
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VSD - Volts
Fig. 11. Capacitance
100
f = 1 MHz
140
120
100
80
60
40
20
0
0
Fig. 8. Transconductance
TJ = - 40ºC
25ºC
125ºC
50
100
150
200
250
300
ID - Amperes
Fig. 10. Gate Charge
10
9
VDS = 50V
I D = 90A
8
I G = 10mA
7
6
5
4
3
2
1
0
0
50
100 150 200 250 300 350 400
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
1
0.1
Ciss
10
Coss
0.01
Crss
1
0.001
0
5
10
15
20
25
30
35
40
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
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