BAV19WS データシートの表示（PDF） - Vishay Siliconix
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BAV19WS Datasheet PDF : 4 Pages
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BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Forward voltage
Leakage current
Dynamic Forward resistance
Diode capacitance
Reverse recovery time
IF = 100 mA
IF = 200 mA
VR = 100 V
VR = 100 V, Tj = 100 °C
VR = 150 V
VR = 150 V, Tj = 100 °C
VR = 200 V
VR = 200 V, Tj = 100 °C
IF = 10 mA
VR = 0 V, f = 1 MHz
IF = 30 mA, IR = 30 mA,
iR = 3 mA, RL = 100
VF
VF
BAV19WS-V-G
IR
BAV20WS-V-G
IR
BAV21WS-V-G
IR
BAV19WS-V-G
IR
BAV20WS-V-G
IR
BAV21WS-V-G
IR
rf
CD
trr
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
250
100
Tj = 100 °C
200
TYP.
5
1.5
MAX.
1
1.25
100
15
100
15
100
15
50
UNIT
V
V
nA
μA
nA
μA
nA
μA
pF
ns
10
25 °C
150
1
0.1
0.01
0
18858
0.2
0.4
0.6
0.8
1
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
100
50
0
0 20 40 60 80 100 120 140 160 180 200
18864
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
0.3
100
0.2
DC current IF
Current (rectif.) IO
0.1
0
0
18859
30
60
90
120 150
Tamb - Ambient Temperature (°C)
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
10
1
1
18861
10
100
IF - Forward Current (mA)
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
Rev. 1.0, 16-May-12
2
Document Number: 83423
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