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MBR20100CT データシートの表示(PDF) - ON Semiconductor

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MBR20100CT
ONSEMI
ON Semiconductor ONSEMI
MBR20100CT Datasheet PDF : 4 Pages
1 2 3 4
MBR2060CT, MBR2080CT,
MBR2090CT, MBR20100CT
MBR2060CT and MBR20100CT are Preferred Devices
SWITCHMODE
Power Rectifiers
This series uses the Schottky Barrier principle with a platinum
barrier metal. These state−of−the−art devices have the following
features:
Features
20 Amps Total (10 Amps Per Diode Leg)
Guard−Ring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
Shipped 50 units per plastic tube
Pb−Free Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
60−100 VOLTS
1
2, 4
3
4
TO−220AB
CASE 221A
PLASTIC
1
2
3
MARKING DIAGRAM
AY WW
B20x0
AKA
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
January, 2005 − Rev. 6
A
= Assembly Location
Y
= Year
WW = Work Week
B20x0 = Device Code
x
= 6, 8, 9 or 10
AKA = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBR2060CT/D

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