FDD3670 データシートの表示（PDF） - Fairchild Semiconductor
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FDD3670 Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = 7.3A
8
6
VDS = 20V
50V
80V
4
2
0
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1
RθJA = 96oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 9. Maximum Safe Operating Area.
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
C RSS
20
40
60
80
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
30
20
10
0
0.1
1
10
100
t1, TIME (sec)
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * Rθ JA(t)
Duty Cycle, D = t1/ t2
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1000
FDD3670 Rev C(W)
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