MSA1022 データシートの表示（PDF） - E-Tech Electronics LTD

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MSA1022

PNP RF Amplifier Transistor

E-Tech Electronics LTD 

PNP RF Amplifier Transistor

Surface Mount

COLLECTOR

3

2

BASE

1

EMITTER

MAXIMUM RATINGS (T A = 25 °C)

Rating

Symbol

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

V CBO

V CEO

V EBO

IC

THERMAL CHARACTERISTICS

Characteristic

Symbol

Power Dissipation

PD

Junction Temperature

TJ

Storage Temperature

T stg

ELECTRICAL CHARACTERISTICS (T A = 25 °C)

Characteristic

Collector Cutoff Current

(V CB = –10 Vdc, I E = 0)

Collector-Emitter Breakdown Voltage

(V CE = –20 Vdc, I B = 0)

Emitter-Base Breakdown Voltage

(V EB = –5.0 Vdc, I C = 0)

DC Current Gain (1)

(V CE = –10 Vdc, I C = –1.0 mAdc)

Current-Gain - Bandwidth Product

(V CB = –10 Vdc, I E = 1.0 mAdc)

1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%.

Value

–30

–20

–5.0

–30

Max

200

150

-55 ~ +150

Symbo

I CBO

I CEO

I EBO

h FE

fT

Unit

Vdc

Vdc

Vdc

mAdc

Unit

mW

°C

°C

lMin

—

—

—

110

150

DEVICE MARKING

MSA1022–CT1

3

1

2

CASE 318D–03, STYLE1

SC–59

Max

–0.1

–100

–10

220

—

Unit

µAdc

µAdc

µAdc

—

MHz

Marking Symbol

ECX

The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month

in which the part was manufactured.

N1–1/1

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