SDM6912 データシートの表示（PDF） - Unspecified

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SDM6912

Dual N-Channel Enhancement Mode Field Effect Transistor

Unspecified 

S DM6912

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

P a ra meter

S ymbol Condition

DRAIN-SOURCE DIODE CHARACTERISTICS b

Diode Forward Voltage

VSD VGS = 0V, Is =5.0A

Min TypC Max Unit

0.76 1.1 V

Notes

a.S urface Mounted on FR 4 Board, t 10sec.

b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.

c.Guaranteed by design, not subject to production testing.

25

V GS =10,9,8,7,6,5,4V

20

15

10

V GS =3V

5

0

0 0.5 1

1.5 2

2.5 3

V DS , Drain-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

25

20

25 C

15

10

T j=125 C

5

-55 C

0

0.0 1.0

2.0 3.0

4.0 5.0 6.0

V G S , G ate-to-S ource Voltage (V )

F igure 2. Trans fer C haracteris tics

1200

1000

800

600

C is s

400

C oss

200

C rss

0

0

5

10 15

20

25 30

V DS , Drain-to S ource Voltage (V )

F igure 3. C apacitance

0.030

0.025

V GS =10V

0.020

0.015

0.010

0.005

T j=125 C

25 C

-55 C

0

0

5

10

15

20

ID, Drain C urrent(A)

F igure 4. On-R es is tance Variation with

Drain C urrent and Temperature

3

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