M36W432BG85ZA6 データシートの表示（PDF） - STMicroelectronics

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M36W432BG85ZA6

32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36W432TG

M36W432BG

32 Mbit (2Mb x16, Boot Block) Flash Memory

and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product

PRELIMINARY DATA

FEATURES SUMMARY

s MULTIPLE MEMORY PRODUCT

– 32 Mbit (2Mb x 16), Boot Block, Flash Memory

– 4 Mbit (256Kb x 16) SRAM Memory

s SUPPLY VOLTAGE

– VDDF = 2.7V to 3.3V

– VDDS = VDDQF = 2.7V to 3.3V

– VPPF = 12V for Fast Program (optional)

s ACCESS TIME: 70ns, 85ns

s LOW POWER CONSUMPTION

s ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W432TG: 88BAh

– Bottom Device Code, M36W432BG: 88BBh

FLASH MEMORY

s MEMORY BLOCKS

– Parameter Blocks (Top or Bottom Location)

– Main Blocks

s PROGRAMMING TIME

– 10µs typical

– Double Word Programming Option

– Quadruple Word Programming Option

s BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

s AUTOMATIC STANDBY MODE

s PROGRAM and ERASE SUSPEND

s 100,000 PROGRAM/ERASE CYCLES per

BLOCK

s COMMON FLASH INTERFACE

s SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device identifier

SRAM

s 4 Mbit (256Kb x 16)

s ACCESS TIME: 70ns

s LOW VDDS DATA RETENTION: 1.5V

s POWER DOWN FEATURES USING TWO

CHIP ENABLE INPUTS

Figure 1. Package

FBGA

Stacked LFBGA66 (ZA)

12 x 8 mm

November 2002

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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