MCL4154-TR データシートの表示（PDF） - Vishay Siliconix
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MCL4154-TR Datasheet PDF : 5 Pages
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MCL4154
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
mounted on epoxy-glass hard
RthJA
500
K/W
tissue, Fig. 4,
35 µm copper clad, 0.9 mm2
copper area per electrode
Junction temperature
Tj
175
°C
Storage temperature range
Tstg
- 65 to + 175
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
IF = 30 mA
VF
VR = 25 V
IR
VR = 25 V, Tj = 150 °C
IR
IR = 5 µA, tp/T = 0.01, tp = 0.3 ms V(BR)
35
VR = 0, f = 1 MHz, VHF = 50 mV
CD
IF = IR = 10 mA, iR = 1 mA
trr
IF = 10 mA, VR = 6 V,
trr
iR = 0.1 x IR, RL = 100 Ω
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Typ.
Max
Unit
1000
mV
100
nA
100
µA
V
4
pF
4
ns
2
ns
100
Scattering Limit
10
1000
100
Tj = 100 °C
1
0.1
0.01
0
94 9154
VR = 25 V
40
80
120 160 200
Tj - Junction Temperature (°C)
Figure 1. Reverse Current vs. Junction Temperature
10
Tj = 25 °C
1
0.1
0
94 9152
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
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2
Document Number 85568
Rev. 1.8, 07-Mar-06
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