C5448 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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C5448

Silicon NPN Triple Diffused Character Display Horizntal Deflection Output

Hitachi -> Renesas Electronics 

2SC5448

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at Tc = 25°C

Symbol

VCBO

VCEO

VEBO

IC

ic(peak)

P Note1

C

Tj

Tstg

Ratings

Unit

1500

V

700

V

6

V

10

A

20

A

50

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to emitter

breakdown voltage

V(BR)CEO

700

Emitter to base breakdown V(BR)EBO

6

voltage

Collector cutoff current

I CES

—

DC current transfer ratio

hFE1

10

DC current transfer ratio

hFE2

3.5

Collector to emitter saturation VCE(sat)

—

voltage

Base to emitter saturation

VBE(sat)

—

voltage

Fall time

tf

—

Fall time

tf

—

Typ

—

—

—

—

—

—

—

0.2

0.15

Max

—

—

500

30

6.5

5

1.5

0.4

—

Unit

V

V

µA

V

V

µs

µs

Test Conditions

IC = 10mA, RBE = ∞

IE = 10mA, IC = 0

VCE = 1500V, RBE = 0

VCE = 5 V, IC = 1A

VCE = 5 V, IC = 6A

IC = 6A, IB = 1.6A

IC = 6A, IB = 1.6A

ICP = 5A, IB1 = 1.6A

fH = 31.5kHz

ICP = 5A, IB1 = 1.3A

fH = 64kHz

2

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