2N6497G データシートの表示（PDF） - ON Semiconductor
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2N6497G Datasheet PDF : 5 Pages
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2N6497
High Voltage NPN Silicon
Power Transistors
These devices are designed for high voltage inverters, switching
regulators and line−operated amplifier applications. Especially well
suited for switching power supply applications.
Features
• High Collector−Emitter Sustaining Voltage −
VCEO(sus) = 250 Vdc (Min)
• Excellent DC Current Gain −
hFE = 10−75 @ IC = 2.5 Adc
• Low Collector−Emitter Saturation Voltage @ IC = 2.5 Adc −
VCE(sat) = 1.0 Vdc (Max)
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Symbol Value
Unit
VCEO
250
Vdc
VCB
350
Vdc
VEB
6.0
Vdc
IC
5.0
Adc
10
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
IB
2.0
Adc
PD
80
W
0.64
W/°C
TJ, Tstg −65 to +150 °C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.56
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
http://onsemi.com
5 AMPERE
POWER TRANSISTORS
NPN SILICON
250 VOLTS − 80 WATTS
MARKING
DIAGRAM
1
2
3
4
TO−220AB
CASE 221A
STYLE 1
2N6497G
AYWW
2N6497 = Device Code
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
2N6497
2N6497G
TO−220AB
TO−220AB
(Pb−Free)
50 Units / Rail
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 13
Publication Order Number:
2N6497/D
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