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2N6497 データシートの表示(PDF) - ON Semiconductor

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2N6497 Datasheet PDF : 5 Pages
1 2 3 4 5
2N6497
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.03
SINGLE PULSE
0.02
0.01
0.01
0.01 0.02 0.03 0.05 0.1
0.2 0.3
P(pk)
t1
t2
SINGLE
PULSE
DUTY CYCLE, D = t1/t2
RqJC(max) = 1.56°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
0.5 1.0 2.0 3.0 5.0 10 20 30 50
t, TIME OR PULSE WIDTH (ms)
Figure 3. Thermal Response
100 200 300 500 1000
20
10
5.0
2.0
dc
5.0 ms
1.0 ms
1.0
0.5
TC = 25°C
0.2
BONDING WIRE LIMITED
THERMAL LIMIT (SINGLE PULSE)
0.1
SECOND BREAKDOWN LIMIT
0.05 CURVES APPLY BELOW RATED VCEO
100 ms
0.02
5.0 7.0 10
20 30 50 70 100
200 300 500
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 4. Active−Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltage shown on
Figure 4 may be found at any case temperature by using the
appropriate curve on Figure 6.
10
7.0
5.0
ts
3.0
2.0
VCC = 125 V
IC/IB = 5.0
TJ = 25°C
1.0
0.7
0.5
0.3
tf
0.2
0.1
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
Figure 5. Turn−Off Time
100
SECOND BREAKDOWN DERATING
80
60
THERMAL DERATING
40
20
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 6. Power Derating
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