®
MJE5852
HIGH VOLTAGE PNP POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s PNP TRANSISTOR
s HIGH VOLTAGE CAPABILITY
APPLICATIONS:
s SWITCHING REGULATORS
s MOTOR CONTROL
s INVERTERS
DESCRIPTION
The MJE5852 is manufactured using High
Voltage PNP Multi-Epitaxial technology for high
switching speed and high voltage capability.
It is intended for use in high frequency and
efficiency converters, switching regulators and
motor control.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5ms)
Base Current
Base Peak Current (tp < 5ms)
Total Dissipation at Tc ≤ 25 oC
Storage Temperature
Max. Operating Junction Temperature
September 2003
Value
-450
-400
-7
-8
-16
-4
-8
80
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
oC
oC
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