2N6800 データシートの表示（PDF） - Semelab - > TT Electronics plc
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2N6800 Datasheet PDF : 2 Pages
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SEME
LAB
2N6800
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
Static Drain to Source
RDS(on) On–State Resistance
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 2A
VGS = 10V
VDS = VGS
VDS ³ 15V
ID = 3A
ID = 250mA
IDS = 2A
VDS = 0.8xMax Rating
VGS = 0
TJ = 125°C
VGS = 20V
VGS = –20V
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 3A
VDS = Max Rating x 0.5
VDD = 200V
ID = 3A
VGS = 10V
RG = 7.5W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current 2
VSD Diode Forward Voltage
trr
Reverse Recovery TimeReverse
Qrr
Recovery Charge
ton
Forward Turn–On Time
IS = 3.0A
TJ = 25°C
VGS = 0
IF = 3.0A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
PACKAGE CHARACTERISTICS
LD
Internal Drain Inductance (from centre of drain pad to die)
LS
Internal Source Inductance (from centre of source pad to end of source bond wire)
Min. Typ.
400
0.37
2
2
620
200
75
19.1
1
6.7
Negligible
5
15
Max.
1
1.15
4
25
250
100
–100
33
5.8
19.9
30
35
55
35
3
12
1.4
700
6.2
Unit
V
V/°C
W
V
S((WW)
mA
nA
pF
nC
ns
A
V
ns
mC
nH
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
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E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
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