HE8551L データシートの表示（PDF） - Unisonic Technologies

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HE8551L

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

Unisonic Technologies 

HE8551

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-40

V

Collector-Emitter Voltage

VCEO

-25

V

Emitter-Base Voltage

Collector Dissipation (TA=25℃)

VEBO

-6

V

PC

1

W

Collector Current

Junction Temperature

Storage Temperature

IC

-1.5

A

TJ

+150

℃

TSTG

-65 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

Current Gain Bandwidth Product

Output Capacitance

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE1

hFE2

hFE3

VCE(SAT)

VBE(SAT)

VBE

fT

COB

TEST CONDITIONS

IC=-100μA, IE=0

IC=-2mA, IB=0

IE=-100μA, IC=0

VCB=-35V, IE=0

VEB=-6V, IC=0

VCE=-1V, IC=-5mA

VCE=-1V, IC=-100mA

VCE=-1V, IC=-800mA

IC=-800mA, IB=-80mA

IC=-800mA, IB=-80mA

VCE=-1V, IC=-10mA

VCE=-10V, IC=-50mA

VCB=-10V, IE=0, f=1MHz

„ CLASSIFICATION OF hFE2

MIN TYP MAX UNIT

-40

V

-25

V

-6

V

-100 nA

-100 nA

45 170

85 160 500

40

80

-0.28 -0.5

V

-0.98 -1.2

V

-0.66 -1.0

V

100 190

MHz

9.0

pF

RANK

RANGE

C

120-200

D

160-300

E

250-500

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R201-047.D

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