IRF634S(2020) データシートの表示（PDF） - Vishay Semiconductors
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IRF634S Datasheet PDF : 9 Pages
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www.vishay.com
IRF634S, SiHF634S
Vishay Siliconix
Power MOSFET
D
D2PAK (TO-263)
G
GD
S
S
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
250
VGS = 10 V
41
6.5
22
Single
0.45
FEATURES
• Surface-mount
• Available in tape and reel
• Dynamic dv/dt rating
• Repetitive avalanche rated
Available
• Fast switching
• Ease of paralleling
Available
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface-mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface-mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
Note
a. See device orientation
D2PAK (TO-263)
SiHF634S-GE3
-
D2PAK (TO-263)
-
IRF634STRLPbF a
D2PAK (TO-263)
SiHF634STRR-GE3 a
IRF634STRRPbF a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current a
Linear derating factor
Linear derating factor (PCB mount) e
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single pulse avalanche energy b
Avalanche current a
Repetitive avalanche energy
Maximum power dissipation
Maximum power dissipation (PCB mount) e
Peak diode recovery dv/dt c
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dv/dt
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 7.3 mH, Rg = 25 , IAS = 8.1 A (see fig. 12)
c. ISD 8.1 A, di/dt 120 A/μs, VDD VDS, TJ 150 °C
d. 1.6 mm from case
e. When mounted on 1" square PCB (FR-4 or G-10 material)
LIMIT
250
± 20
8.1
5.1
32
0.59
0.025
300
8.1
7.4
74
3.1
4.8
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S20-0682-Rev. D, 07-Sep-2020
1
Document Number: 91035
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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