IRF9640S データシートの表示（PDF） - Vishay Semiconductors
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IRF9640S Datasheet PDF : 10 Pages
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www.vishay.com
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB mount) a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = -250 μA
Reference to 25 °C, ID = -1 mA
VDS = VGS, ID = -250 μA
VGS = ± 20 V
VDS = -200 V, VGS = 0 V
VDS = -160 V, VGS = 0 V, TJ = 125 °C
VGS = -10 V
ID = 6.6 A b
VDS = -50 V, ID = -6.6 A b
-200
-
-2.0
-
-
-
-
4.1
-
-0.20
-
-
-
-
-
-
-
-
-4.0
± 100
-100
-500
0.50
-
V
V/°C
V
nA
μA
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Gate Input Resistance
Rg
Drain-Source Body Diode Characteristics
VGS = 0 V,
VDS = -25 V,
f = 1.0 MHz, see fig. 5
-
1200
-
-
370
-
pF
-
81
-
-
VGS = -10 V
ID = -11 A, VDS = -160 V,
see fig. 6 and 13 b
-
-
-
44
-
7.1
nC
-
27
-
14
-
VDD = -100 V, ID = -11 A,
Rg = 9.1 , RD = 8.6 , see fig. 10 b
-
43
-
ns
-
39
-
-
38
-
Between lead,
D
6 mm (0.25") from
package and center of
G
die contact
S
f = 1 MHz, open drain
-
4.5
-
nH
-
7.5
-
0.3
-
1.7
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Current a
ISM
p -n junction diode
D
G
S
-
-
-11
A
-
-
-44
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = -11 A, VGS = 0 V b
-
-
-5.0
V
trr
Qrr
-
TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μs b
-
250
300
ns
2.9
3.6
μC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S16-0754-Rev. E, 02-May-16
2
Document Number: 91087
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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