AUIRFZ44V データシートの表示（PDF） - International Rectifier

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AUIRFZ44V

HEXFET® Power MOSFET

International Rectifier 

AUIRFZ44V

Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

60

––– –––

V VGS = 0V, ID = 250μA

ΔV(BR)DSS/ΔTJ

RDS(on)

VGS(th)

gfs

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

–––

–––

0.062 –––

––– 16.5

f V/°C Reference to 25°C, ID = 1mA

mΩ VGS = 10V, ID = 31A

2.0 ––– 4.0

24 ––– –––

V

S

f VDS = VGS, ID = 250μA

VDS = 25V, ID = 31A

IDSS

Drain-to-Source Leakage Current

––– ––– 25

μA VDS = 60V, VGS = 0V

––– ––– 250

VDS = 48V, VGS = 0V, TJ = 150°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Qg

Total Gate Charge

––– ––– 67

ID = 51A

Qgs

Qgd

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

––– ––– 18

––– ––– 25

f nC VDS = 48V

VGS = 10V, See Fig.6 and 13

td(on)

Turn-On Delay Time

––– 13 –––

VDD = 30V

tr

Rise Time

––– 97 –––

ID = 51A

td(off)

tf

Turn-Off Delay Time

Fall Time

–––

–––

40

57

–––

–––

Ãf ns RG = 9.1Ω

RD = 0.6Ω, See Fig.10

LD

Internal Drain Inductance

LS

Internal Source Inductance

Between lead,

D

––– 4.5 –––

nH 6mm (0.25in.)

Between lead,

G

––– 7.5 –––

and center of die contact

S

Ciss

Input Capacitance

––– 1812 –––

VGS = 0V

Coss

Output Capacitance

––– 393 ––– pF VDS = 25V

Crss

Reverse Transfer Capacitance

––– 103 –––

ƒ = 1.0MHz, See Fig.5

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 55

A showing the

––– ––– 220

––– ––– 2.5

integral reverse

G

V

f p-n junction diode.

S

TJ = 25°C, IS = 51A, VGS = 0V

––– 70 105

––– 146 219

f ns TJ = 25°C, IF = 51A

nC di/dt = 100A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L = 89μH, RG = 25Ω, IAS = 51A. (See Figure 12)

ƒ ISD ≤ 51A, di/dt ≤ 227A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C

„ Pulse width ≤ 300μs; duty cycle ≤ 2%.

2

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