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IDT54FCT821BD データシートの表示(PDF) - Integrated Device Technology

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IDT54FCT821BD
IDT
Integrated Device Technology IDT
IDT54FCT821BD Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IDT54/74FCT821/823/824/825A/B/C
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS(1)
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol
Rating
Commercial
VTERM(2) Terminal Voltage
with Respect to
GND
VTERM(3) Terminal Voltage
with Respect to
GND
–0.5 to +7.0
–0.5 to VCC
TA
Operating
0 to +70
Temperature
TBIAS Temperature
–55 to +125
Under Bias
TSTG Storage
–55 to +125
Temperature
PT
Power Dissipation
0.5
Military
–0.5 to +7.0
–0.5 to VCC
–55 to +125
–65 to +135
–65 to +150
0.5
Unit
V
V
°C
°C
°C
W
Symbol Parameter(1) Conditions Typ. Max. Unit
CIN
Input
VIN = 0V
6 10 pF
Capacitance
COUT Output
VOUT = 0V
8 12 pF
Capacitance
NOTE:
2608 tbl 05
1. This parameter is measured at characterization but not tested.
IOUT
DC Output
Current
120
120
mA
NOTES:
2608 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage
may exceed VCC by +0.5V unless otherwise noted.
2. Input and VCC terminals only.
3. Outputs and I/O terminals only.
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC – 0.2V
Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
Symbol
Parameter
Test Conditions(1)
Min. Typ.(2)
VIH
Input HIGH Level
Guaranteed Logic HIGH Level
2.0 —
Max.
Unit
V
VIL
Input LOW Level
Guaranteed Logic LOW Level
— 0.8
V
II H
Input HIGH Current
II L
Input LOW Current
VCC = Max.
VI = VCC
VI = 2.7V
VI = 0.5V
5
µA
5(4)
— –5(4)
VI = GND
–5
IOZH
Off State (High Impedance)
Output Current
IOZL
VCC = Max.
VO = VCC
VO = 2.7V
VO = 0.5V
10
µA
— 10(4)
— –10(4)
VO = GND
— –10
VIK
Clamp Diode Voltage
IOS
Short Circuit Current
VCC = Min., IN = –18mA
VCC = Max.(3), VO = GND
— –0.7 –1.2 V
–75 –120 — mA
VOH
Output HIGH Voltage
VCC = 3V, VIN = VLC or VHC, IOH = –32µA
VCC = Min.
IOH = –300µA
VHC VCC
V
VHC VCC
VIN = VIH or VIL
IOH = –15mA MIL.
2.4 4.3 —
IOH = –24mA COM'L. 2.4 4.3
VOL
Output LOW Voltage
VCC = 3V, VIN = VLC or VHC, IOL = 300µA
VCC = Min.
IOL = 300µA
— GND VLC
V
— GND VLC(4)
VIN = VIH or VIL
IOL = 32mA MIL.
— 0.3 0.5
IOL = 48mA COM'L.
— 0.3 0.5
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient and maximum loading.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. This parameter is guaranteed but not tested.
2608 tbl 06
7.19
4

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