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SRK2000DTR(2012) データシートの表示(PDF) - STMicroelectronics

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SRK2000DTR Datasheet PDF : 17 Pages
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Electrical characteristics
4
Electrical characteristics
SRK2000
TJ = -25 to 125 °C, VCC = 12 V, CGD1 = CGD2 = 4.7 nF, EN = VCC; unless otherwise
specified; typical values refer to TJ = 25 °C.
Table 5. Electrical characteristics
Symbol
Parameter
Test condition
Min. Typ. Max. Unit
Supply voltage
VCC
VCCOn
VCCOff
Hys
Operating range
Turn-on threshold
Turn-off threshold
Hysteresis
VccZ Zener voltage
Supply current
After turn-on
(1)
(1)
IccZ = 20 mA
Istart-up
Iq
ICC
Iq
Startup current
Quiescent current
Operating supply current
Quiescent current
Before turn-on, Vcc = 4 V
After turn-on
@ 300 kHz
EN = SGND
Drain sensing inputs and synch functions
VDVS1,2_H Upper clamp voltage
IDVS1,2_b Input bias current
Arming voltage
VDVS1,2_A (positive-going edge)
Pre-triggering voltage
VDVS1,2_PT (negative-going edge)
VDVS1,2_TH Turn-on threshold
IDVS1,2_On Turn-on source current
Turn-off threshold
VDVS1,2_Off (positive-going edge)
TPD_On
TPD_Off
TON_min
DOFF
DON
Turn-on debounce delay
Turn-off propagation delay
Minimum on-time
Min. operating duty-cycle
Restart duty-cycle
Gate-drive enable function
VEN_On
Hyst
Enable threshold
Hysteresis
IDVS1,2 = 20 mA
VDVS1,2 = 0 to Vcc (2)
VDVS1,2 = -250 mV
R = 680 kfrom EN to Vcc
R = 270 kfrom EN to Vcc
After sourcing IDS1,2_On
After crossing VDS1,2_Off
Positive-going edge (1)
Below VEN_On
4.5
32 V
4.25 4.5 4.75 V
4 4.25 4.5 V
0.25
V
33 36 39 V
45 70 µA
250 500 µA
35
mA
150 250 µA
VccZ
V
-1
1 µA
1.4
V
0.7
V
-250 -200 -180
-50
µA
-18 -25 -32
mV
-9 -12.5 -16
250
ns
60 ns
150
ns
40
%
60
%
1.7 1.8 1.9 V
45
mV
6/17
Doc ID 17811 Rev 2

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