SRK2000DTR データシートの表示（PDF） - STMicroelectronics
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SRK2000DTR Datasheet PDF : 19 Pages
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SRK2000
5
Electrical characteristics
Electrical characteristics
TJ = -25 to 125 °C, VCC = 12 V, CGD1 = CGD2 = 4.7 nF, EN = VCC; unless otherwise
specified; typical values refer to TJ = 25 °C.
Symbol
Table 5. Electrical characteristics
Parameter
Test condition
Min. Typ. Max. Unit
Supply voltage
VCC
VCCOn
VCCOff
Hys
Operating range
Turn-on threshold
Turn-off threshold
Hysteresis
VCCZ Zener voltage
Supply current
After turn-on
See(1)
See(1)
-
ICCZ = 20 mA
Istart-up
Iq
ICC
Iq
Startup current
Quiescent current
Operating supply current
Quiescent current
Before turn-on, VCC = 4 V
After turn-on
At 300 kHz
EN = SGND
Drain sensing inputs and synch functions
VDVS1,2_H
IDVS1,2_b
VDVS1,2_A
Upper clamp voltage
Input bias current
Arming voltage
(positive-going edge)
IDVS1,2 = 20 mA
VDVS1,2 = 0 to VCC(2)
-
VDVS1,2_PT
Pre-triggering voltage
(negative-going edge)
-
VDVS1,2_TH Turn-on threshold
IDVS1,2_On Turn-on source current
VDVS1,2_Off
Turn-off threshold
(positive-going edge)
TPD_On
TPD_Off
TON_min
DOFF
DON
Turn-on debounce delay
Turn-off propagation delay
Minimum on-time
Min. operating duty-cycle
Restart duty-cycle
-
VDVS1,2 = -250 mV
R = 680 k from EN to VCC
R = 270 k from EN to VCC
After sourcing IDS1,2_On
After crossing VDS1,2_Off
-
-
-
Gate drive enable function
VEN_On
Hyst
Enable threshold
Hysteresis
Positive-going edge(1)
Below VEN_On
4.5
-
32 V
4.25 4.5 4.75 V
4 4.25 4.5 V
- 0.25 -
V
33 36 39 V
-
45 70 µA
- 250 500 µA
-
35
- mA
- 150 250 µA
-
VCCZ
-
V
-1
-
1 µA
-
1.4
-
V
-
0.7
-
V
-250 -200 -180 mV
-
-50
- µA
-18 -25 -32
mV
-9 -12.5 -16
- 250 - ns
-
-
60 ns
- 150 - ns
-
40
-%
-
60
-%
1.7 1.8 1.9 V
-
45
- mV
DocID17811 Rev 4
7/19
19
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