SI2316BDS(2007) データシートの表示（PDF） - Vishay Semiconductors
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SI2316BDS Datasheet PDF : 6 Pages
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Si2316BDS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.12
ID = 4.1 A
10
0.09
TJ = 150 °C
1
0.06
TA = 125 °C
0.1
TJ = 25 °C
0.03
TA = 25 °C
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.6
2.4
2.2
ID = 250 µA
2.0
1.8
1.6
1.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature ( C)
Threshold Voltage
100
*rDS(on) Limited
10
1
0.1
TA = 25 °C
0.01
Single Pulse
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
8
6
TA = 25 °C
Single Pulse
4
2
0
0.01
0.1
1
10
Time (sec)
Single Pulse Power
100 600
10 ms
100 ms
1s
10 s
dc
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4
0.001
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
*VGS minimum VGS at which rDS(on) is specified
Safe Operating Area
Document Number: 70445
S-71330-Rev. A, 02-Jul-07
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