SI2316BDS データシートの表示（PDF） - Vishay Semiconductors
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SI2316BDS Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
2.0
Si2316BDS
Vishay Siliconix
4
1.6
3
1.2
2
0.8
1
0.4
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating*
0.0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
*The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01 10- 4
Notes:
PDM
Single Pulse
10- 3
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 130 °C/W
3. T JM TA = PDMZthJA(t)
4. Surface Mounted
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70445.
Document Number: 70445
S09-1503-Rev. B, 10-Aug-09
www.vishay.com
5
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