SFT1341-W データシートの表示（PDF） - ON Semiconductor

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SFT1341-W

Power MOSFET –40V, 112mΩ, –10A, Single P-Channel

ON Semiconductor 

Ordering number : ENA1444B

SFT1341

Power MOSFET

–40V, 112mΩ, –10A, Single P-Channel

Features

• Low On-Resistance

• Low Gate Charge

• ESD Diode-Protected Gate

• High Speed Switching

• Low Gate Drive Voltage

• Pb-free and RoHS Compliance

Specifications

Absolute Maximum Ratings at Ta = 25°C

Parameter

Symbol

Drain to Source Voltage

VDSS

Gate to Source Voltage

VGSS

Drain Current (DC)

ID

Drain Current

PW≤10μs, duty cycle≤1%

IDP

Power Dissipation

Tc=25°C

PD

Junction Temperature

Tj

Storage Temperature

Tstg

Thermal Resistance Ratings

Parameter

Junction to Case Steady State

Junction to Ambient *1

Note : *1 Insertion mounted

Symbol

RθJC

RθJA

Value

Unit

–40

V

±10

V

–10

A

–40

A

1.0

W

15

W

150

°C

−55 to +150

°C

Value

8.33

125

Unit

°C/W

http://onsemi.com

Electrical Connection

P-Channel

2, 4

1

Packing Type:TL

3

Marking

T1341

LOT No.

TL

4

1

2

IPAK(TP)

3

4

2

1

3

DPAK(TP-FA)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of this data sheet.

Semiconductor Components Industries, LLC, 2014

September, 2014

91014 TKIM TC-00003148/60612 TKIM/40809PA MSIM TC-00001932 No.A1444-1/6

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