HYB3165160AT-40 データシートの表示（PDF） - Siemens AG

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HYB3165160AT-40

4M x 16-Bit Dynamic RAM ( 8k, 4k & 2k Refresh)

Siemens AG 

4M x 16-Bit Dynamic RAM

( 8k, 4k & 2k Refresh)

Advanced Information

• 4 194 304 words by 16-bit organization

HYB 3164160AT(L) -40/-50/-60

HYB 3165160AT(L) -40/-50/-60

HYB 3166160AT(L) -40/-50/-60

• 0 to 70 °C operating temperature

• Fast Page Mode operation

• Performance:

-40 -50 -60

tRAC RAS access time

40

50

60

ns

tCAC CAS access time

10

13

15

ns

tAA Access time from address 20

25

30

ns

tRC Read/write cycle time

75

90

110 ns

tPC Fast page mode cycle time 30

35

40

ns

• Single + 3.3 V (± 0.3V) power supply

• Low power dissipation:

HYB3166160AT(L)

HYB3165160AT(L)

HYB3164160AT(L)

-40

-50

-60

900

558

396 mW

756

468

324 mW

612

378

270 mW

7.2 mW standby (TTL)

3.24 mW standby (MOS)

720 µW standby for L-version

• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),

RAS-only refresh, hidden refresh and self refresh (L-version only)

• 2 CAS / 1 WE byte control

• 8192 refresh cycles /128 ms , 13 R/ 9C addresses (HYB 3164160AT)

4096 refresh cycles / 64 ms , 12 R/ 10C addresses (HYB 3165160AT)

2048 refresh cycles / 32 ms , 11 R/ 11C addresses (HYB 3166160AT)

• 256 msec refresh period for L-versions

• Plastic Package: P-TSOPII-50 400 mil

Semiconductor Group

1

6.97

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