CM1500HC-66R データシートの表示（PDF） - MITSUBISHI ELECTRIC
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CM1500HC-66R Datasheet PDF : 9 Pages
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< HVIGBT MODULES >
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
VCC = 1800V, VGE = ±15V
RG(on) = 1.6Ω, LS = 100nH
Tj = 125°C, Inductive load
10000
Irr
10
1000
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
VCC = 1800V, VGE = ±15V
RG(on) = 1.6Ω, LS = 100nH
Tj = 150°C, Inductive load
10000
Irr
10
1000
1
trr
100
1
trr
100
0.1
100
1000
Emitter Current [A]
10
10000
0.1
100
1000
Emitter Current [A]
10
10000
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
1
Rth(j-c)Q = 8.0K/kW
Rth(j-c)D = 15. 0K/kW
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
Time [s]
Z R 1exp n
th( jc) (t)
i1
i
t
i
Ri [K/kW] :
i [sec] :
1
0.0096
0.0001
2
0.1893
0.0058
3
0.4044
0.0602
4
0.3967
0.3512
December 2012 (HVM-1054-D)
7
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