HSDL-4230(1999) データシートの表示（PDF） - HP => Agilent Technologies

部品番号

コンポーネント説明

メーカー

HSDL-4230
(Rev.:1999)

High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp

HP => Agilent Technologies 

2

The package design of these

emitters is optimized for efficient

power dissipation. Copper

leadframes are used to obtain

better thermal performance than

the traditional steel leadframes.

The wide angle emitter, HSDL-

4220, is compatible with the IrDA

SIR standard and can be used

with the HSDL-1000 integrated

SIR transceiver.

Absolute Maximum Ratings

Parameter

Peak Forward Current

Average Forward Current

DC Forward Current

Power Dissipation

Reverse Voltage (IR = 100 µA)

Transient Forward Current (10 µs Pulse)

Operating Temperature

Storage Temperature

LED Junction Temperature

Lead Soldering Temperature

[1.6 mm (0.063 in.) from body]

Symbol

IFPK

IFAVG

IFDC

PDISS

VR

IFTR

TO

TS

TJ

Min.

Max.

500

Unit

mA

100

mA

100

mA

260

mW

5

V

1.0

A

0

70

°C

-20

85

°C

110

°C

260 for °C

5 seconds

Reference

[2], Fig. 2b

Duty Factor = 20%

Pulse Width = 100 µs

[2]

[1], Fig. 2a

[3]

Notes:

1. Derate linearly as shown in Figure 4.

2. Any pulsed operation cannot exceed the Absolute Max Peak Forward Current as specified in Figure 5.

3. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and

the wire bonds.

Electrical Characteristics at 25°C

Parameter

Forward Voltage

Symbol Min.

VF

1.30

Forward Voltage

Temperature Coefficient

∆V/∆T

Series Resistance

RS

Diode Capacitance

CO

Reverse Voltage

Thermal Resistance,

Junction to Pin

VR

2

Rθjp

Typ.

1.50

2.15

-2.1

-2.1

2.8

40

20

110

Max.

1.70

Unit

V

mV/ °C

ohms

pF

V

°C/W

Condition

IFDC = 50 mA

IFPK = 250 mA

IFDC = 50 mA

IFDC = 100 mA

IFDC = 100 mA

0 V, 1 MHz

IR = 100 µA

Reference

Fig. 2a

Fig. 2b

Fig. 2c

Share Link: