EGP50A(2011) データシートの表示（PDF） - Vishay Semiconductors
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EGP50A Datasheet PDF : 4 Pages
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EGP50A thru EGP50G
Vishay General Semiconductor
100
Pulse Width = 300 μs
1 % Duty Cycle
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.2
EGP20A thru EGP20D
EGP20F and EGP20G
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
210
TJ = 25 °C
180
f = 1.0 MHz
Vsig = 50 mVp-p
150
120
90
60
30
0
0.1
EGP20A thru EGP20D
EGP20F and EGP20G
1
10
100
Reverse Voltage (V)
1000
Fig. 5 - Typical Junction Capacitance
100
100
TJ = 150 °C
10
TJ = 125 °C
10
1
TJ = 75 °C
0.1
1
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
GP20
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.042 (1.07)
0.037 (0.94)
DIA.
1.0 (25.4)
MIN.
Document Number: 88585 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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