APT50M65JFLL データシートの表示（PDF） - Advanced Power Technology
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APT50M65JFLL Datasheet PDF : 5 Pages
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APT50M65JFLL
500V 58A 0.065Ω
POWER MOS 7 R FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Qg. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
RDS(ON)
losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
ISOTOP®
"UL Recognized"
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT50M65JFLL
UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
500
Volts
58
Amps
232
±30
Volts
±40
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
520
4.16
Watts
W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
58
50
3000
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 29A)
IDSS
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
0.065
250
1000
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com
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