BD3502FVM-TR データシートの表示（PDF） - ROHM Semiconductor
部品番号
コンポーネント説明
メーカー
BD3502FVM-TR Datasheet PDF : 17 Pages
| |||
BD3504FVM,BD3500FVM,BD3501FVM,BD3502FVM
Technical Note
●Electrical characteristics (unless otherwise noted, Ta=25℃ VCC=5V VIN=3.3V Ven=3V. R1=R1'=∞Ω, R2=R2'=0Ω)
◎BD3504FVM
Parameter
Symbol
Standard Value
Unit
MIN
TYP
MAX
Condition
Bias Current
ICC
-
0.85
1.7 mA
Shut Down Mode Current
IST
-
0
10
µA Ven=0V
Feed Back Voltage 1
VFB1
0.643 0.650 0.657 V Io=50mA
Feed Back Voltage 2
VFB2
0.630
0.650
0.670
V
Vcc=4.5V to 5.5V ,
Ta=-10℃ to 100℃(※)
Output Voltage
Vo
-
1.20
-
V
R1=R1'=3.9kΩ,
R2=R2'=3.3KΩ
Line Regulation
Reg.l
-
0.1
0.5 %/V VCC=4.5V to 5.5V
Load Regulation
Reg.L
-
0.5
10
mV Io=0 to 3A
[Enable]
High Level Enable Input Voltage
Enhi
2
-
Vcc
V
Low Level Enable Input Voltage
Enlow
-0.3
-
0.8
V
Enable pin Input Current
Ien
-
7
10
µA Ven=3V
[Voltage Feed Back]
VFB Input Bias Current
IFB
-
80
-
nA
[Source Voltage]
VS Input Bias Current
ISBIAS
-
1.2
2.4 mA
VS Standby Current
ISSTB
150
-
-
mA VS=1V Ven=0V
[Output MOSFET Driver]
MOSFET Driver Source Current
IGSO
2
3
4
mA VFB=0.6V,VGATE=2.5V
MOSFET Driver Sink Current
IGSI
2
3
4
mA VFB=0.7V,VGATE=2.5V
[UVLO]
VCC UVLO
VccUVLO 4.20
4.35
4.50
V Vcc:Sweep up
VCC UVLO Hysterisis
Vcchys
100
160
220 mV Vcc:Sweep down
VD UVLO
VDUVLO Vo×0.6 Vo×0.7 Vo×0.8 V VD:Sweep up
[Drain Voltage Sensing]
VD Input bias Current
Ivd
-
0
-
nA
[NRCS/SCP]
NRCS Charge Current
Inrcs
14
20
26
µA VNRCS=0.5V
SCP Charge Current
Iscpch
14
20
26
µA VNRCS=0.5V
SCP Discharge Current
IscpDi
0.3
-
-
mA VNRCS=0.5V
SCP Threshold Voltage
Vscp
1.2
1.3
1.4
V
Short Detect Voltage
Voscp Vo×0.3 Vo×0.35 Vo×0.4 V
NRCS Stand-by Voltage
VSTB
-
-
50
mV
(※) Design Guarantee
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
4/16
2010.05 - Rev.A
Share Link: 