AMP03 データシートの表示（PDF） - Analog Devices

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AMP03

High-Speed Differential Amplifier

Analog Devices 

AMP03

WAFER TEST LIMITS (@ VS = ؎15 V, TA = 25؇C, unless otherwise noted.)*

Parameter

Symbol

Conditions

AMP03GBC

Limit

Unit

Offset Voltage

Gain Error

Input Voltage Range

Common-Mode Rejection

Power Supply Rejection Ratio

Output Swing

Short-Circuit Current Limit

Supply Current

VOS

IVR

CMR

PSRR

VO

ISC

ISY

VS = ± 18 V

No Load, VIN = ± 10 V, RS = 0 Ω

VCM = ± 10 V

VS = ± 6 V to ± 18 V

RL = 2 kΩ

Output Shorted to Ground

No Load

0.5

0.008

± 10

80

8

± 12

+45/–15

3.5

mV max

% max

V min

dB min

µV/V max

V max

mA min

mA max

*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed

for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V

Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage

Output Short-Circuit Duration . . . . . . . . . . . . . . Continuous

Storage Temperature Range

P, J Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . 300°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C

Operating Temperature Range

AMP03B . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C

AMP03F, AMP03G . . . . . . . . . . . . . . . . . . –40°C to +85°C

DICE CHARACTERISTICS

1. REFERENCE

2. –IN

3. +IN

4. –VEE

5. SENSE

6. OUTPUT

7. +VCC

8. NC

Package Type

Header (J)

8-Lead PDIP (P)

8-Lead SOIC (S)

␪JA3

␪JC

Unit

150

18

°C/W

103

43

°C/W

155

40

°C/W

NOTES

1Absolute maximum ratings apply to both DICE and packaged parts, unless

otherwise noted.

2For supply voltages less than ± 18 V, the absolute maximum input voltage is equal

to the supply voltage.

3θJA is specified for worst-case mounting conditions, i.e., θJA is specified for device

in socket for header and PDIP packages and for device soldered to printed circuit

board for SOIC package.

ORDERING GUIDE

DIE SIZE 0.076 inch ؋ 0.076 inch, 5,776 sq. mm

(1.93 mm ؋ 1.93 mm, 3.73 sq. mm)

BURN-IN CIRCUIT

+18V

25k⍀

AMP03

25k⍀

25k⍀

Model1

Temperature Package

Range

Description

Package

Option2

AMP03GP

–40°C to +85°C 8-Lead PDIP

AMP03BJ

–40°C to +85°C Header

AMP03FJ

–40°C to +85°C Header

AMP03BJ/883C –55°C to +125°C Header

AMP03GS

–40°C to +85°C 8-Lead SOIC

AMP03GS-REEL –40°C to +85°C 8-Lead SOIC

5962-9563901MGA –55°C to +125°C Header

AMP03GBC

Die

P-8

H-08B

H-08B

H-08B

S-8

S-8

H-08B

NOTES

1Burn-in is available on commercial and industrial temperature range parts in

PDIP and header packages.

2Consult factory for /883 data sheet.

–18V

SLEW RATE TEST CIRCUIT

+15V 0.1␮F

AMP03

VIN = ؎10V

0.1␮F

–15V

VOUT = ؎10V

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the AMP03 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. F

–3–

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