1N4151 データシートの表示（PDF） - Philips Electronics

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1N4151

High-speed diodes

Philips Electronics 

Philips Semiconductors

High-speed diodes

Product specification

1N4150; 1N4151

FEATURES

• Hermetically sealed leaded glass

SOD27 (DO-35) package

• High switching speed: max. 4 ns

• General application

• Continuous reverse voltage:

max. 50 V

• Repetitive peak reverse voltage:

max. 75 V

• Repetitive peak forward current:

max. 600 mA and 450 mA

respectively.

APPLICATIONS

• High-speed switching

• 1N4150: general purpose use in

computer and industrial

applications

• 1N4151: military and industrial

applications.

DESCRIPTION

The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar

technology, and encapsulated in hermetically sealed leaded glass SOD27

(DO-35) packages.

handbook, halfpagke

a

MAM246

The marking band indicates the cathode.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VRRM

VR

IF

IFRM

IFSM

Ptot

Tstg

Tj

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

1N4150

1N4151

repetitive peak forward current

1N4150

1N4151

non-repetitive peak forward current

total power dissipation

storage temperature

junction temperature

see Fig.2; note 1

square wave; Tj = 25 °C prior to

surge; see Fig.4

t = 1 µs

t = 1 ms

t=1s

Tamb = 25 °C; note 1

Note

1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.

MIN.

−

−

MAX.

75

50

UNIT

V

V

−

300

mA

−

200

mA

−

600

mA

−

450

mA

−

4

A

−

1

A

−

0.5

A

−

500

mW

−65

+200 °C

−

200

°C

1999 Jun 01

2

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