CR5AS-12(2005) データシートの表示（PDF） - Renesas Electronics
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CR5AS-12 Datasheet PDF : 8 Pages
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CR5AS-12
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
7.8
5
Surge on-state current
I2t for fusing
ITSM
90
I2t
33
Peak gate power dissipation
PGM
0.5
Average gate power dissipation
PG (AV)
0.1
Peak gate forward voltage
VFGM
6
Peak gate reverse voltage
VRGM
6
Peak gate forward current
IFGM
0.3
Junction temperature
Tj
– 40 to +125
Storage temperature
Tstg
– 40 to +125
Mass
—
0.26
Notes: 1. With gate to cathode resistance RGK = 220 Ω.
Unit
Conditions
A
A
Commercial frequency, sine half wave
180° conduction, Tc = 88°C
A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
V
A
°C
°C
g
Typical value
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak reverse current
IRRM
—
—
2.0
mA Tj = 125°C, VRRM applied,
RGK = 220 Ω
Repetitive peak off-state current
IDRM
—
—
2.0
mA Tj = 125°C, VDRM applied,
RGK = 220 Ω
On-state voltage
VTM
—
—
1.8
V
Tc = 25°C, ITM = 15 A,
instantaneous value
Gate trigger voltage
VGT
—
—
0.8
V
Tj = 25°C, VD = 6 V, IT = 0.1 A
Gate non-trigger voltage
Gate trigger current
VGD
0.1
—
—
V
Tj = 125°C, VD = 1/2 VDRM,
RGK = 220 Ω
IGT
1
—
100Note3
µA
Tj = 25°C, VD = 6 V, IT = 0.1 A
Holding current
Thermal resistance
IH
—
3.5
—
mA Tj = 25°C, VD = 12 V,
RGK = 220 Ω
Rth (j-c)
—
—
3.0
°C/W Junction to caseNote2
Notes: 2. The measurement point for case temperature is at anode tab.
3. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
IGT (µA)
1 to 30
20 to 50 40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 220 Ω resistance between the gate and
cathode.
Rev.2.00, Apr.05.2005, page 2 of 7
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