HTIP112 データシートの表示（PDF） - Hi-Sincerity Microelectronics

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HTIP112

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE200203

Issued Date : 2000.08.01

Revised Date : 2002.03.28

Page No. : 2/4

10000

Current Gain & Collector Current

10000

Current Gain & Collector Current

1000

100

10

125oC

25oC

75oC

hFE @ VCE=4V

1000

100

10

125oC

25oC

75oC

hFE @ VCE=3V

1

1

10

100

1000

10000

Collector Current-IC (mA)

1

1

10

100

1000

10000

Collector Current-IC (mA)

10000

Saturation Voltage & Collector Current

VCE(sat) @ IC=100IB

10000

Saturation Voltage & Collector Current

VCE(sat) @ IC=250IB

1000

25oC

125oC 75oC

100

100

1000

Collector Current-IC (mA)

10000

10000

Saturation Voltage & Collector Current

1000

25oC

125oC

75oC

100

100

1000

Collector Current-IC (mA)

10000

10000

ON Voltage & Collcetor Current

1000

25oC

125oC

75oC

VBE(sat) @ IC=250IB

100

100

HTIP112

1000

Collector Current-IC (mA)

10000

1000

100

100

25oC

125oC

75oC

VBE(ON) @ VCE=4V

1000

Collector Current-IC (mA)

10000

HSMC Product Specification

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