HBC337 データシートの表示（PDF） - Hi-Sincerity Microelectronics
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HBC337 Datasheet PDF : 4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6415
Issued Date : 1992.11.25
Revised Date : 2002.02.05
Page No. : 1/4
HBC337
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBC337 is designed for driver and output-stage of audio
amplifiers.
Features
• High DC Current Gain: 100-600 at IC=100mA,VCE=1V
• Complementary to HBC327
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 50 V
VCEO Collector to Emitter Voltage ...................................................................................... 45 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ....................................................................................................... 800 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
50
-
BVCEO
45
-
BVEBO
5
-
ICBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
100
-
*hFE2
40
-
fT
-
210
Cob
-
4
Classification of hFE1
Max.
-
-
-
100
0.7
1.2
600
-
-
-
Unit
V
V
V
nA
V
V
MHZ
pF
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=45V, IE=0
IB=500mA, IB=50mA
IC=300mA, VCE=1V
VCE=1V, IC=100mA
VCE=1V, IC=300mA
VCE=5V, IC=10mA, f=100MHZ
VCB=10V, IE=0, f=1MHZ
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
16
100-250
25
160-400
40
250-600
HBC337
HSMC Product Specification
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