EPA018A-70 データシートの表示（PDF） - Unspecified
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EPA018A-70 Datasheet PDF : 2 Pages
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Excelics
EPA018A-70
DATA SHEET
High Efficiency Heterojunction Power FET
• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
• +20.0dBm TYPICAL OUTPUT POWER
• 11.0dB TYPICAL POWER GAIN AT 18GHz
• TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED
GAIN AT 12GHz
• 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY,
44
19
20
4
D
S
S
G
AND HIGH RELIABILITY
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P1dB
G1dB
PAE
NF
Ga
Idss
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz 18.5 20.0
f=18GHz
20.0
dBm
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz 11.0 13.5
f=18GHz
11.0
dB
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
45
%
Noise Figure
Vds=2V, Ids=15mA
f=12GHz
0.75
dB
Associated Gain
Vds=2V, Ids=15mA
f=12GHz
12.5
dB
Saturated Drain Current Vds=3V, Vgs=0V
30
55
80
mA
Gm
Transconductance
Vds=3V, Vgs=0V
35
60
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0mA
-1.0 -2.5
V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-9
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
Rth
Thermal Resistance
* Overall Rth depends on case mounting.
-6
-14
480*
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
10V
6V
Vgs
Gate-Source Voltage
-6V
-3V
Ids
Drain Current
Idss
40mA
Igsf
Forward Gate Current
9mA
1.5mA
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
16dBm
175oC
-65/175oC
@ 3dB Compression
150 oC
-65/150 oC
Pt
Total Power Dissipation
285mW
240mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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