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LB11923V データシートの表示(PDF) - ON Semiconductor

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LB11923V
ON-Semiconductor
ON Semiconductor ON-Semiconductor
LB11923V Datasheet PDF : 23 Pages
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LB11923V
ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 6.3 V) (continued)
Symbol
Parameter
Conditions
[CLK Pin]
Min
Typ
Max
Unit
DVIN(CLK) Hysteresis
VCC = 6.3 V, 5 V, design target
0.13
0.22
0.31
V
value (Note 2)
IIH(CLK)
IIL(CLK)
f(CLK)
RU(CLK)
[N1 Pin]
Input High-level Current
Input Low-level Current
Input Frequency
Pull-up Resistance
VCLK = VCC
VCLK = 0 V
–10
–170
37
0
–118
53.5
+10
mA
mA
3.9
kHz
70
kW
VIH(N1)
VIL(N1)
VIO(N1)
DVIN(N1)
Input High-level Voltage
Input Low-level Voltage
Input Open Voltage
Hysteresis
VCC = 6.3 V, 5 V
2.0
VCC
V
VCC = 6.3 V, 5 V
0
1.0
V
VCC – 0.5
VCC
V
VCC = 6.3 V, 5 V, design target
0.13
0.22
0.31
V
value (Note 2)
IIH(N1)
IIL(N1)
RU(N1)
[N2 Pin]
VIH(N2)
VIL(N2)
VIO(N2)
DVIN(N2)
Input High-level Current
Input Low-level Current
Pull-up Resistance
Input High-level Voltage
Input Low-level Voltage
Input Open Voltage
Hysteresis
VN1 = VCC
VN1 = 0 V
–10
0
+10
mA
–170
–118
mA
37
53.5
70
kW
VCC = 6.3 V, 5 V
2.0
VCC
V
VCC = 6.3 V, 5 V
0
1.0
V
VCC – 0.5
VCC
V
VCC = 6.3 V, 5 V, design target
0.13
0.22
0.31
V
value (Note 2)
IIH(N2)
Input High-level Current
VN2 = VCC
–10
0
+10
mA
IIL(N2)
Input Low-level Current
VN2 = 0 V
–170
–118
mA
RU(N2)
Pull-up Resistance
37
53.5
70
kW
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Not tested.
2.0
1.79 W
1.5
Mounted on the specified
PCB (114.3 × 76.1 × 1.6 mm
glass epoxy PCB)
1.0
0.62 W Independent IC
0.5
1.002 W
0.347 W
0
20
0
20
40
60
80
100
Ambient Temperature, TA 5C
Figure 1. Pd max TA
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