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LC75878W データシートの表示(PDF) - ON Semiconductor

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LC75878W Datasheet PDF : 36 Pages
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LC75878W
Specifications
Absolute Maximum Ratings at Ta = 25C, VSS = 0 V
Parameter
Maximum supply voltage
Input voltage
Output voltage
Output current
Allowable power dissipation
Operating temperature
Storage temperature
Symbol
VDD max
VLCD max
VIN1
VIN2
VIN3
VOUT1
VOUT2
IOUT1
IOUT2
IOUT3
Pd max
Topr
Tstg
VDD
VLCD
Conditions
CE, CL, DI, INH
OSC
VLCD1, VLCD2, VLCD3, VLCD4
OSC, P1 to P4
VLCD0, S1 to S75, COM1 to COM10
S1 to S75
COM1 to COM10
P1 to P4
Ta = 85C
Ratings
Unit
0.3 to +7.0
V
0.3 to +12.0
0.3 to +7.0
0.3 to VDD+0.3
V
0.3 to VLCD+0.3
0.3 to VDD+0.3
0.3 to VLCD+0.3
V
300
A
3
5
mA
200
mW
40 to +85
C
55 to +125
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Allowable Operating Ranges at Ta = 40 to +85C, VSS = 0 V
Parameter
Supply voltage
Output voltage
Input voltage
Input high level voltage
Input low level voltage
Recommended external
resistance
Recommended external
capacitance
Guaranteed oscillation range
Data setup time
Data hold time
CE wait time
CE setup time
CE hold time
High level clock pulse width
Low level clock pulse width
INH switching time
Symbol
VDD
VLCD
VLCD
VLCD0
VLCD1
VLCD2
VLCD3
VLCD4
VIH
VIL
ROSC
COSC
fOSC
tds
tdh
tcp
tcs
tch
tH
tL
tc
Conditions
VDD
VLCD, When the display contrast
adjustment circuit is used
VLCD, When the display contrast
adjustment circuit is not used
VLCD0
VLCD1
VLCD2
VLCD3
VLCD4
CE, CL, DI, INH
CE, CL, DI, INH
OSC
min
2.7
7.0
4.5
VLCD4
+4.5
0
0.8VDD
0
OSC
OSC
25
CL, DI
[Figure 2]
160
CL, DI
[Figure 2]
160
CE, CL
[Figure 2]
160
CE, CL
[Figure 2]
160
CE, CL
[Figure 2]
160
CL
[Figure 2]
160
CL
[Figure 2]
160
INH, CE
10
[Figure 3], [ Figure 4], [ Figure 5]
Ratings
typ
unit
max
6.0
11.0
V
11.0
VLCD
V
3/4(VLCD0
VLCD4)
VLCD0
2/4(VLCD0
VLCD4)
VLCD0
V
1/4(VLCD0
VLCD4)
VLCD0
1.5
6.0
V
0.2VDD
V
43
k
680
pF
50
100 kHz
ns
ns
ns
ns
ns
ns
ns
s
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
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