MJE4353 データシートの表示（PDF） - Motorola => Freescale
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MJE4353 Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High-Voltage Ċ High Power
Transistors
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
• High Collector–Emitter Sustaining Voltage —
NPN
PNP
VCEO(sus) = 140 Vdc — MJE4342 MJE4352
VCEO(sus) = 160 Vdc — MJE4343 MJE4353
• High DC Current Gain — @ IC = 8.0 Adc
hFE = 35 (Typ)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ • Low Collector–Emitter Saturation Voltage —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
MJE4342 MJE4343
MJE4352 MJE4353
140
160
140
160
7.0
16
20
5.0
125
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
RθJC
1.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v w (1) Pulse Test: Pulse Width 5.0 µs, Duty Cycle 10%.
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
_C
Unit
_C/W
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
Reference: Ambient Temperature
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
Order this document
by MJE4342/D
NPN
MJE4342
MJE4343
PNP
MJE4352
MJE4353
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 – 160 VOLTS
CASE 340D–01
TO–218 TYPE
1
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