HBT136AE データシートの表示（PDF） - Hi-Sincerity Microelectronics

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HBT136AE

TRIAC

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE200101

Issued Date : 2001.07.01

Revised Date : 2002.03.27

Page No. : 2/4

Static Characteristics (Ta=25°C)

Symbol

IGT

IL

IH

VT

VGT

ID

Parameter

Gate Trigger Current

Latching Current

Holding Current

On-state Voltage

Gate Trigger Voltage

Off-state Leakage

Current

Conditions

VD=12V, IG=0.1A, T2+ G+

VD=12V, IG=0.1A, T2+ G-

VD=12V, IG=0.1A, T2- G-

VD=12V, IG=0.1A, T2- G+

VD=12V, IGT=0.1A, T2+ G+

VD=12V, IGT=0.1A, T2+ G-

VD=12V, IGT=0.1A, T2- G-

VD=12V, IGT=0.1A, T2- G+

VD=12V, IGT=0.1A

IT=5A

VD=12V, IT=0.1A

VD=VDRM

Static Characteristics

Symbol

dVD/dt

tgt

Parameter

Critical rate of rise of

off-state voltage

Gate controlled turn-

on time

Conditions

VDM=67% V ; DRM(max)

Tj= 125°C; exponential

waveform; gate open circuit

ITM=6A; VD=VDRM(max);

IG=0.1A; dIG/dt=5A/us

Thermal Resistances

Symbol

Rth j-mb

Rth j-a

Parameter

Thermal resistance junction to

mounting base

Thermal resistance junction to

ambient

Conditions

Full cycle

Half cycle

In free air

HBT136AE

Min. Typ. Max.

Unit

-

5 10 mA

-

6 10 mA

-

6 10 mA

-

18 25 mA

-

-

15 mA

-

-

20 mA

-

-

15 mA

-

-

20 mA

-

6 15 mA

- 1.4 1.70 V

- 0.8 1.5 V

-

- 200 uA

Min. Typ. Max. Unit

-

50

- V/us

-

2

- us

Min. Typ. Max. Unit

-

- 3.0 K/W

-

- 3.7 K/W

-

60

- K/W

HBT136AE

HSMC Product Specification

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