BCR1AM-12A-TB データシートの表示（PDF） - Renesas Electronics
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BCR1AM-12A-TB Datasheet PDF : 7 Pages
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BCR1AM-12A
Preliminary
Electrical Characteristics
Parameter
Rated value
Symbol
Unit
Min.
Typ.
Max.
Test conditions
Repetitive peak off-state current
IDRM
—
—
0.5
mA Tj = 125C, VDRM applied
On-state voltage
VTM
—
—
1.6
V
Tc = 25C, ITM = 1.5 A,
Instantaneous measurement
Gate trigger voltageNote2
VFGT
—
—
2.0
V
Tj = 25C, VD = 6 V, RL = 6 ,
VRGT
—
—
2.0
V
RG = 330
VRGT
—
—
2.0
V
Gate trigger currentNote2
IFGT
—
—
7
mA Tj = 25C, VD = 6 V, RL = 6 ,
IRGT
—
—
7
mA RG = 330
IRGT
—
—
7
mA
Gate non-trigger voltage
Thermal resistance
VGD
0.1
—
—
V
Tj = 125C, VD = 1/2 VDRM
Rth (j-c)
—
—
50
C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4
(dv/dt)c
2
—
—
V/s Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.5 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0177EJ0300 Rev.3.00
Sep 29, 2010
Page 2 of 6
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