APT60M75JFLL データシートの表示（PDF） - Advanced Power Technology

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APT60M75JFLL

POWER MOS 7® FREDFET

Advanced Power Technology  

DYNAMIC CHARACTERISTICS

Symbol Characteristic

Test Conditions

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Eon

Eoff

Eon

Eoff

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy 6

Turn-off Switching Energy

Turn-on Switching Energy 6

Turn-off Switching Energy

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 300V

ID = 58A @ 25°C

RESISTIVE SWITCHING

VGS = 15V

VDD = 300V

ID = 58A @ 25°C

RG = 0.6Ω

INDUCTIVE SWITCHING @ 25°C

VDD = 400V, VGS = 15V

ID = 58A, RG = 5Ω

INDUCTIVE SWITCHING @ 125°C

VDD = 400V VGS = 15V

ID = 58A, RG = 5Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions

IS

Continuous Source Current (Body Diode)

ISM Pulsed Source Current 1 (Body Diode)

VSD Diode Forward Voltage 2 (VGS = 0V, IS = -58A)

dv/dt Peak Diode Recovery dv/dt 5

Reverse Recovery Time

trr

(IS = -58A, di/dt = 100A/µs)

Reverse Recovery Charge

Qrr

(IS = -58A, di/dt = 100A/µs)

Peak Recovery Current

IRRM (IS = -58A, di/dt = 100A/µs)

Tj = 25°C

Tj = 125°C

Tj = 25°C

Tj = 125°C

Tj = 25°C

Tj = 125°C

THERMAL CHARACTERISTICS

Symbol Characteristic

RθJC

RθJA

Junction to Case

Junction to Ambient

MIN

MIN

MIN

APT60M75JFLL

TYP MAX UNIT

8930

1130

pF

50

195

48

nC

100

23

15

ns

55

10

1205

1385

µJ

1865

1550

TYP MAX UNIT

58 Amps

232

1.3 Volts

15 V/ns

300

ns

600

2.6

µC

10

17

Amps

34

TYP MAX UNIT

0.21

40

°C/W

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting Tj = +25°C, L = 1.90mH, RG = 25Ω, Peak IL = 58A

5 dv/dt numbers reflect the limitations of the test circuit rather than the

device itself. IS ≤ -ID58A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C

6 Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and inforation contained herein.

0.25

0.20

0.9

0.15

0.7

0.10

0.05

0 10-5

0.5

Note:

t1

0.3

t2

Duty Factor D = t1/t2

0.1

Peak TJ = PDM x ZθJC + TC

0.05

SINGLE PULSE

10-4

10-3

10-2

10-1

1.0

10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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