M29W640DT(2004) データシートの表示（PDF） - STMicroelectronics

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M29W640DT
(Rev.:2004)

64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

M29W640DT

M29W640DB

64 Mbit (8Mb x8 or 4Mb x16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VCC = 2.7V to 3.6V for Program, Erase,

Read

– VPP =12 V for Fast Program (optional)

■ ACCESS TIME: 90 ns

■ PROGRAMMING TIME

– 10 µs per Byte/Word typical

– Double Word Programming Option

■ 135 MEMORY BLOCKS

– 1 Boot Block and 7 Parameter Blocks,

8 KBytes each (Top or Bottom Location)

– 127 Main Blocks, 64 KBytes each

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program

algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ VPP/WP Pin for FAST PROGRAM and WRITE

PROTECT

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ COMMON FLASH INTERFACE

– 64-bit Security Code

■ EXTENDED MEMORY BLOCK

– Extra block used as security block or to

store additional information

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W640DT: 22DEh

– Bottom Device Code M29W640DB:

22DFh

Figure 1. Packages

TSOP48 (N)

12 x 20mm

FBGA

TFBGA63 (ZA)

63 ball array

December 2004

1/49

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