HSK1118 データシートの表示（PDF） - Hi-Sincerity Microelectronics
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HSK1118 Datasheet PDF : 5 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
HSK1118
Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 1/5
Description
• Field Effect Transistor.
• Silicon N Channel MOS Type.
• High Speed, High Current DC-DC Converter, Relay Drive and
Motor Drive Applications
Features
• 4-Volt Gate Drive
• Low Drain-Source On Resistanc - RDS(on)=0.95Ω (Typ.)
• High Forward Transfer Admittance - | Yfs |=4.0S (Typ.)
• Low Leakage Current - IDSS = 300uA (Max.) @VDS = 600V
• Enhancement-Mode - Vth = 1.5~3.5V @VDS = 10V, ID = 1mA
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ...................................................................................................... 150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 45 W
• Maximum Voltages and Currents (Tc=25°C)
DRAIN to SOURCE Breakdown Voltage .......................................................................... 600 V
DRAIN to GATE Breakdown Voltage ................................................................................ 600 V
GATE to SOURCE Voltage ............................................................................................... ±30 V
DRAIN Current (Cont.).......................................................................................................... 6 A
DRAIN Current (Pluse) ....................................................................................................... 24 A
Thermal Characteristics
Characteristic
Symbol
Max.
Junction to Case
RθJC
2.77
Junction to Ambient
RθJA
62.5
Note : This transistor is an electrostatic sensitive device. Please handle with care.
Units
°C/W
°C/W
HSMC Product Specification
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