HA8050 データシートの表示（PDF） - Hi-Sincerity Microelectronics
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HA8050 Datasheet PDF : 4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6107
Issued Date : 1998.09.05
Revised Date : 2002.04.18
Page No. : 1/4
HA8050
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HA8050 is designed for use in 2W output amplifier of portable radios in
class B push-pull operation.
Features
• High total power dissipation (PT: 2W, TC=25°C)
• High collector current (IC: 1.5A)
• Complementary to HA8550
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................................... 1 W
Total Power Dissipation (Tc=25°C)................................................................................................... 2 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage..................................................................................................... 40 V
VCEO Collector to Emitter Voltage ................................................................................................. 25 V
VEBO Emitter to Base Voltage.......................................................................................................... 6 V
IC Collector Current ........................................................................................................................ 1.5 A
IB Base Current .......................................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCEO
25
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
VBE(on)
-
-
*hFE1
45
-
*hFE2
85
-
*hFE3
40
-
fT
100
-
Classification on hFE2
Rank
Range
B
85-160
C
120-200
Max.
-
-
-
100
100
0.5
1.2
1
-
500
-
-
Unit
V
V
V
nA
nA
V
V
V
MHz
Test Conditions
IC=100uA
IC=2mA
IE=100uA
VCB=35V
VEB=6V
IC=0.8A, IB=80mA
IC=0.8A, IB=80mA
VCE=1V, IC=10mA
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
VCE=10V, IC=50mA
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
D
160-320
E
250-500
HA8050
HSMC Product Specification
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