HBAV70 データシートの表示（PDF） - Hi-Sincerity Microelectronics

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HBAV70

SWITCHING DIODE

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6801

Issued Date : 1995.11.17

Revised Date : 2002.10.24

Page No. : 1/3

HBAV70

SWITCHING DIODE

Description

The HBAV70 consists of two diodes in a plastic surface mount

package. The diodes are connected in series and the unit is

designed for high-speed switching application in hybrid thick and

thin-film circuits.

SOT-23

Features

• Small SMD Package (SOT-23)

• Ultra-high Speed

• Low Forward Voltage

• Fast Reverse Recovery Time

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -65 ~ +150 °C

Junction Temperature .................................................................................................... +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ................................................................................ 250 mW

• Maximum Voltages and Currents (Ta=25°C)

Reverse Voltage .................................................................................................................. 70 V

Forward Current ............................................................................................................. 200 mA

Repetitive Forward Current ............................................................................................ 500 mA

Characteristics (Ta=25°C)

Characteristic

Reverse Breakdown Voltage

Forward Voltage

Reverse Current

Total Capacitance

Reverse Recovery Time

Symbol

Condition

Min Max Unit

V(BR) IR=100uA

70 - V

VF(1) IF=1mA

- 715 mV

VF(2) IF=10mA

- 855 mV

VF(3) IF=50mA

- 1100 mV

VF(4) IF=100mA

- 1300 mV

IR VR=70

- 5 uA

CT VR=0, f=1MHz

- 1.5 pF

Trr

IF=IR=10mA, RL=100Ω

measured at IR=1mA, VR=5V

-

15 nS

HBAV70

HSMC Product Specification

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