M29F800AB データシートの表示（PDF） - STMicroelectronics

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M29F800AB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Single Supply Flash Memory

STMicroelectronics 

M29F800AT

M29F800AB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block)

Single Supply Flash Memory

s SINGLE 5V±10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

s ACCESS TIME: 70ns

s PROGRAMMING TIME

– 8µs per Byte/Word typical

s 19 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 16 Main Blocks

s PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

s ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

s TEMPORARY BLOCK UNPROTECTION

MODE

s LOW POWER CONSUMPTION

– Standby and Automatic Standby

s 100,000 PROGRAM/ERASE CYCLES per

BLOCK

s 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

s ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29F800AT: 00ECh

– Bottom Device Code M29F800AB: 0058h

TSOP48 (N)

12 x 20mm

44

1

SO44 (M)

Figure 1. Logic Diagram

VCC

19

A0-A18

15

DQ0-DQ14

W

DQ15A–1

M29F800AT

E

M29F800AB

BYTE

G

RB

RP

VSS

AI02198B

July 2000

1/22

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