BC857C データシートの表示（PDF） - Philips Electronics
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BC857C Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistors
Product specification
BC856; BC857
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846 and BC847.
MARKING
TYPE
NUMBER
BC856
BC856A
BC856B
BC857
MARKING
CODE(1)
3D∗
3A∗
3B∗
3H∗
TYPE
NUMBER
BC857A
BC857B
BC857C
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING
CODE(1)
3E∗
3F∗
3G∗
handbook, halfpage
3
3
1
1
Top view
2
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BC856
BC857
collector-emitter voltage
BC856
BC857
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Mounted on an FR4 printed-circuit board.
1999 Apr 12
2
MIN.
MAX.
UNIT
−
−80
V
−
−50
V
−
−65
V
−
−45
V
−
−5
V
−
−100
mA
−
−200
mA
−
−200
mA
−
250
mW
−65
+150
°C
−
150
°C
−65
+150
°C
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