BC857C データシートの表示（PDF） - Philips Electronics
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BC857C Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistors
Product specification
BC856; BC857
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
fT
F
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC856
BC857
BC856A; BC857A
BC856B; BC857B
BC857C
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
CONDITIONS
IE = 0; VCB = −30 V
IE = 0; VCB = −30 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −2 mA; VCE = −5 V;
see Figs 2, 3 and 4
IC = −10 mA; IB = −0.5 mA
IC = −100 mA; IB = −5 mA
IC = −10 mA; IB = −0.5 mA; note 1
IC = −100 mA; IB = −5 mA; note 1
IC = −2 mA; VCE = −5 V; note 2
IC = −10 mA; VCE = −5 V; note 2
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = −10 mA; VCE = −5 V;
f = 100 MHz
IC = −200 µA; VCE = −5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
Notes
1. VBEsat decreases by about −1.7 m K/V with increasing temperature.
2. VBE decreases by about −2 mV/K with increasing temperature.
MIN.
−
−
−
125
125
125
220
420
−
−
−
−
−600
−
−
100
−
TYP. MAX. UNIT
−1 −15 nA
−
−4 µA
−
100 nA
−
−
−
−
−
−75
−250
−700
−850
−650
−
4.5
−
475
800
250
475
800
−300
−650
−
−
−750
−820
−
−
mV
mV
mV
mV
mV
mV
pF
MHz
2
10 dB
1999 Apr 12
3
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